Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

Title
Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition
Authors
Jun-Young LeeJeong-Eun KimJin-Ha Hwang안재평Byung Kook LeeSeok-Hwan KimTaek-Mo ChungSun Sook LeeChang Gyoun KimKi-Seok An
Issue Date
2011-05
Publisher
Electrochemical and solid-state letters
Citation
VOL 14, NO 7, J41-J44
Abstract
Nano-floating gate memory devices were fabricated by using nickel nanocrystals as a charge-trapping portion embedded into Al2O3 thin films. Ni nanocrystals were prepared via a thermal reduction of nanoscale NiO layers deposited by atomic layer deposition. Although the continuous deposition of insulating Al2O3 and semiconducting NiO thin films allowed the facile fabrication of charge-trap, the corresponding retention feature suffers from inferior charge trapping/detrapping. On the other hand, the Ni nanocrystals enhanced the retention behavior and exhibited the largest memory window of 13.8 V with the stored charge density of 2.5×1013 traps/cm2, probably due to the isolated formation of charge-trapping centers.
URI
http://pubs.kist.re.kr/handle/201004/41952
ISSN
10990062
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE