Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition
- Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition
- Jun-Young Lee; Jeong-Eun Kim; Jin-Ha Hwang; 안재평; Byung Kook Lee; Seok-Hwan Kim; Taek-Mo Chung; Sun Sook Lee; Chang Gyoun Kim; Ki-Seok An
- Issue Date
- Electrochemical and solid-state letters
- VOL 14, NO 7, J41-J44
- Nano-floating gate memory devices were fabricated by using nickel nanocrystals as a charge-trapping portion embedded into
Al2O3 thin films. Ni nanocrystals were prepared via a thermal reduction of nanoscale NiO layers deposited by atomic layer deposition.
Although the continuous deposition of insulating Al2O3 and semiconducting NiO thin films allowed the facile fabrication of
charge-trap, the corresponding retention feature suffers from inferior charge trapping/detrapping. On the other hand, the Ni nanocrystals
enhanced the retention behavior and exhibited the largest memory window of 13.8 V with the stored charge density of
2.5×1013 traps/cm2, probably due to the isolated formation of charge-trapping centers.
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