Low-frequency noise in junctionless multigate transistors

Title
Low-frequency noise in junctionless multigate transistors
Authors
장도영이재우이치우Jean-Pierre ColingeLaurent Montes이정일김규태Gerard Ghibaudo
Issue Date
2011-03
Publisher
Applied physics letters
Citation
VOL 98, NO 13, 133502-1-133502-3
Abstract
Low-frequency noise in n-type junctionless multigate transistors was investigated. It can be well understood with the carrier number fluctuations whereas the conduction is mainly limited by the bulk expecting Hooge mobility fluctuations. The trapping/release of charge carriers is related not only to the oxide-semiconductor interface but also to the depleted channel. The volume trap density is in the range of 6–30×1016 cm−3 eV−1, which is similar to Si–SiO2 bulk transistors and remarkably lower than in high-k transistors. These results show that the noise in nanowire devices might be affected by additional trapping centers.
URI
http://pubs.kist.re.kr/handle/201004/41955
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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