Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature
- Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature
- 이동연; 심재술; 김태송; 박재홍
- Issue Date
- Micro & nano letters
- VOL 6, NO 7, 553-558
- Pb(Zr0.52Ti0.48)O3 (PZT) thick film-based micro-transducers demonstrate excellent piezoelectric performances. However, its powder-based
film requires very high sintering temperature to obtain high density and good electromechanical properties of the active film. High processing
temperature enables inter-diffusion or reaction between PZT active materials and Si-based substrate to result in device failure via volatilisation
of PbO especially over 8008C. Therefore the preventive solution to this problem should be considered in fabricating silicon-based piezoelectric
microdevices for the better performance. In this research, compatibility in the interface stability and adhesion between the layers of the overall
integrated piezoelectric thick-film devices were thoroughly investigated for the successful application of the process at high temperature. The Pt
(or PtOx)/TiO2/SiNx/Si substrate represented the best interfacial properties among various combinations of structural substrates, so this structure
is highly recommended to integrated piezoelectric thick-film microelectromechanical system devices.
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