Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature

Title
Optimal materials and process conditions of functional layers for piezoelectric MEMS process at high temperature
Authors
이동연심재술김태송박재홍
Issue Date
2011-07
Publisher
Micro & nano letters
Citation
VOL 6, NO 7, 553-558
Abstract
Pb(Zr0.52Ti0.48)O3 (PZT) thick film-based micro-transducers demonstrate excellent piezoelectric performances. However, its powder-based film requires very high sintering temperature to obtain high density and good electromechanical properties of the active film. High processing temperature enables inter-diffusion or reaction between PZT active materials and Si-based substrate to result in device failure via volatilisation of PbO especially over 8008C. Therefore the preventive solution to this problem should be considered in fabricating silicon-based piezoelectric microdevices for the better performance. In this research, compatibility in the interface stability and adhesion between the layers of the overall integrated piezoelectric thick-film devices were thoroughly investigated for the successful application of the process at high temperature. The Pt (or PtOx)/TiO2/SiNx/Si substrate represented the best interfacial properties among various combinations of structural substrates, so this structure is highly recommended to integrated piezoelectric thick-film microelectromechanical system devices.
URI
http://pubs.kist.re.kr/handle/201004/41971
ISSN
1750-0443
Appears in Collections:
KIST Publication > Article
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