Influence of a highly doped buried layer for HfInZnO thin-film transistors
- Influence of a highly doped buried layer for HfInZnO thin-film transistors
- 정유진; 이상렬
- Issue Date
- Semiconductor science and technology
- VOL 27, NO 1, 012001-1-012001-4
- Hafnium–indium–zinc oxide (HIZO) channel thin-film transistors (TFTs) have been reported
with a 12 nm thick indium–zinc oxide (IZO)-buried layer. IZO-buried HIZO TFTs show
excellent electrical characteristics and stabilities such as a high mobility (μFE) of
∼41.4 cm2 V−1 s−1 which is three times higher than that of conventional HIZO TFTs and
significantly enhanced bias-temperature-induced stability. High mobility could be obtained
since the current path is mainly formed on a highly conductive buried layer with a high carrier
concentration over 1018 cm−3. Enhanced stability could be achieved mainly because the
generation of the additional trap state was considerably reduced near the drain region due to a
relatively short path since the current flows vertically from a highly conductive buried layer to
a drain electrode through the HIZO channel via a relatively low carrier density region.
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