Influence of a highly doped buried layer for HfInZnO thin-film transistors

Title
Influence of a highly doped buried layer for HfInZnO thin-film transistors
Authors
정유진이상렬
Issue Date
2012-01
Publisher
Semiconductor science and technology
Citation
VOL 27, NO 1, 012001-1-012001-4
Abstract
Hafnium–indium–zinc oxide (HIZO) channel thin-film transistors (TFTs) have been reported with a 12 nm thick indium–zinc oxide (IZO)-buried layer. IZO-buried HIZO TFTs show excellent electrical characteristics and stabilities such as a high mobility (μFE) of ∼41.4 cm2 V−1 s−1 which is three times higher than that of conventional HIZO TFTs and significantly enhanced bias-temperature-induced stability. High mobility could be obtained since the current path is mainly formed on a highly conductive buried layer with a high carrier concentration over 1018 cm−3. Enhanced stability could be achieved mainly because the generation of the additional trap state was considerably reduced near the drain region due to a relatively short path since the current flows vertically from a highly conductive buried layer to a drain electrode through the HIZO channel via a relatively low carrier density region.
URI
http://pubs.kist.re.kr/handle/201004/42055
ISSN
02681242
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KIST Publication > Article
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