Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide

Title
Design of Trench Gate GaN Power MOSFET using Al2O3 Gate Oxide
Authors
강이구김용태
Keywords
Power MOSFET; Circuit design; GaN; Al2O3 gate
Issue Date
2012-03
Publisher
Journal of Physics: Conference Series
Citation
VOL 352, 012025-1-012025-8
Abstract
A trench gate type 600V GaN power MOSFET structure with Al2O3 gate oxide has been designed and simulated for obtaining optimum device and process parameters for fabrication. As a result, when the trench gate depth is 2.4㎛, the breakdown voltage is 620V and the on resistance is 0.4Ωcm2, which is relatively very low on resistance comparing with the same trench gate Si power MOSFET structure.
URI
http://pubs.kist.re.kr/handle/201004/42106
ISSN
17426596
Appears in Collections:
KIST Publication > Article
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