Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
- Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
- 윤종문; 정후영; 홍성훈; You Yin; 문형석; 정성준; 한준희; 김용인; 김용태; 이헌; 김상욱; 이정용
- PRAM; nanoarray; block copolymer lithography
- Issue Date
- Journal of materials chemistry
- VOL 22, NO 4, 1347-1351
- We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5
(GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching.
The created 30 nm scale phase change memory cell (aerial array density: 207 Gbit inch 2) showed
a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells.
More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where
the reset current was 100 mA. Such a low reset current, presumably caused by nanoscale small cell
dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set
operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns
trailing. This work provides a significant step for low power consumption and ultra-high density
storage based on phase change materials.
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