Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

Title
Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
Authors
윤종문정후영홍성훈You Yin문형석정성준한준희김용인김용태이헌김상욱이정용
Keywords
PRAM; nanoarray; block copolymer lithography
Issue Date
2012-01
Publisher
Journal of materials chemistry
Citation
VOL 22, NO 4, 1347-1351
Abstract
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: 207 Gbit inch 2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.
URI
http://pubs.kist.re.kr/handle/201004/42143
ISSN
09599428
Appears in Collections:
KIST Publication > Article
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