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dc.contributor.author윤종문-
dc.contributor.author정후영-
dc.contributor.author홍성훈-
dc.contributor.authorYou Yin-
dc.contributor.author문형석-
dc.contributor.author정성준-
dc.contributor.author한준희-
dc.contributor.author김용인-
dc.contributor.author김용태-
dc.contributor.author이헌-
dc.contributor.author김상욱-
dc.contributor.author이정용-
dc.date.accessioned2015-12-03T00:46:45Z-
dc.date.available2015-12-03T00:46:45Z-
dc.date.issued201201-
dc.identifier.citationVOL 22, NO 4, 1347-1351-
dc.identifier.issn09599428-
dc.identifier.other36986-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/42143-
dc.description.abstractWe demonstrate the fabrication and phase change memory performance of a conical TiN/Ge2Sb2Te5 (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: 207 Gbit inch 2) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mA. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.-
dc.publisherJournal of materials chemistry-
dc.subjectPRAM-
dc.subjectnanoarray-
dc.subjectblock copolymer lithography-
dc.titleLarge-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory-
dc.typeArticle-
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