Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
- Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
- 이종한; 신상원; 채근화; 김동환; 송종한
- Dilute magnetic semiconductor; Ferromagnetic; Copper implantation; ZnO
- Issue Date
- Current applied physics
- VOL 12, NO 3, 924-927
- 1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of
1 x 1017 ions/㎠ at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at roomtemperature
and the saturation magnetization of this sample was estimated to be 0.12 μB per Cu, while
the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure
(NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9)
state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped
ZnO film. However, the subsequent annealing at temperature above 800 ℃ on this ferromagnetic sample
induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase.
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