Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO

Title
Room-temperature ferromagnetism of Cu ion-implanted Ga-doped ZnO
Authors
이종한신상원채근화김동환송종한
Keywords
Dilute magnetic semiconductor; Ferromagnetic; Copper implantation; ZnO
Issue Date
2012-05
Publisher
Current applied physics
Citation
VOL 12, NO 3, 924-927
Abstract
1 MeV Cu2+ ions have been implanted into un-doped ZnO and Ga-doped ZnO films with a dose of 1 x 1017 ions/㎠ at room-temperature. Cu ion-implanted Ga-doped ZnO had ferromagnetism at roomtemperature and the saturation magnetization of this sample was estimated to be 0.12 μB per Cu, while the Cu ion-implanted un-doped ZnO did not show ferromagnetic behavior. Near-edge X-ray fine structure (NEXAFS) spectroscopy revealed that a partial amount of implanted Cu ions existed as Cu2+ (d9) state in Ga-doped ZnO film. On the other hand, almost Cu atoms existed as Cu1+ (d10) state in un-doped ZnO film. However, the subsequent annealing at temperature above 800 ℃ on this ferromagnetic sample induced the annihilation of ferromagnetism due to the formation of non-ferromagnetic Cu2O phase.
URI
http://pubs.kist.re.kr/handle/201004/42195
ISSN
15671739
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE