Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics

Title
Growth of Si-doped GaInP on Ge-on-Si substrates and its photoluminescence characteristics
Authors
양창재이상수신근욱오세웅박진섭김창주박원규하승규최원준윤의준
Keywords
III-V on Si; solar cell; photoluminescence
Issue Date
2011-08
Publisher
Applied physics letters
Citation
VOL 99, NO 9, 091904-1-091904-3
Abstract
Optical properties of Si-doped GaInP grown on Ge-on-Si substrates were investigated using photoluminescence (PL). Similar to spontaneously ordered GaInP, two peaks were observed around 1.74 and 1.85 eV at 19 K; however, no satellite peaks were observed in the selected-area diffraction pattern. Based on temperature-dependent PL, the peak at 1.74 eV was attributed to the donor–acceptor pair transition caused by the amphoteric characteristics of Si and/or Ge from the dopant and/or substrate. In addition, the S-shape in the temperature dependence of the 1.85 eV peak was attributed to the interaction of the donor levels with the conduction band of GaInP.
URI
http://pubs.kist.re.kr/handle/201004/42250
ISSN
0003-6951
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KIST Publication > Article
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