Nanofilamentary resistive switching in binary oxide system
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- a review on the present status and outlook
- 김경민; 정두석; 황철성
- Resistive switching; transition metal oxide
- Issue Date
- VOL 22, NO 25, 254002-1-254002-17
- This review article summarized the recent understanding of resistance switching (RS) behavior
in several binary oxide thin film systems. Among the various RS materials and mechanisms,
TiO2 and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with.
To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset
steps. After short discussions on the electrochemistry of ‘electrolytic’ oxide materials, the
general and peculiar aspects of these RS systems and mechanism are elaborated. Although the
RS behaviors and characteristics of these materials are primarily dependent on the repeated
formation and rupture of the conducting filaments (CFs) at the nanoscale at a localized position,
this mechanism appears to offer a basis for the understanding of other RS mechanisms which
were originally considered to be irrelevant to the localized events. The electroforming and set
switching phenomena were understood as the process of CF formation and rejuvenation,
respectively, which are mainly driven by the thermally assisted electromigration and percolation
(or even local phase transition) of defects, while the reset process was understood as the process
of CF rupture where the thermal energy plays a more crucial role. This review also contains
several remarks on the outlook of these resistance change devices as a semiconductor memory.
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