Optical Characterization of the Excitonic States in Low-density Droplet GaAs Quantum Dots for Single Photon Sources

Title
Optical Characterization of the Excitonic States in Low-density Droplet GaAs Quantum Dots for Single Photon Sources
Authors
하승규송진동김수연이정일Samir BounouarLe Si Dang김종수
Keywords
Quantum dot; Exciton; Droplet epitaxy; Micro-photoluminescence; Single photon source
Issue Date
2011-05
Publisher
Journal of the Korean Physical Society
Citation
VOL 58, NO 5, 1330-1333
Abstract
Low-density (~3.5 × 109 cm−2) GaAs quantum dots intended for single photon source application were grown between Al0.3Ga0.7As barriers by using droplet epitaxy. This material system has an emitting wavelength compatible with cost-effective Si-based detectors. Excitation-power-dependent and time-resolved micro-photoluminescence measurements were performed at low temperature (7 K) to characterize the optical properties of the excitonic states, which are attributed to good quantum confinement in the GaAs quantum dots.
URI
http://pubs.kist.re.kr/handle/201004/42282
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE