Optical Characterization of the Excitonic States in Low-density Droplet GaAs Quantum Dots for Single Photon Sources
- Optical Characterization of the Excitonic States in Low-density Droplet GaAs Quantum Dots for Single Photon Sources
- 하승규; 송진동; 김수연; 이정일; Samir Bounouar; Le Si Dang; 김종수
- Quantum dot; Exciton; Droplet epitaxy; Micro-photoluminescence; Single photon source
- Issue Date
- Journal of the Korean Physical Society
- VOL 58, NO 5, 1330-1333
- Low-density (~3.5 × 109 cm−2) GaAs quantum dots intended for single photon source application
were grown between Al0.3Ga0.7As barriers by using droplet epitaxy. This material system has an
emitting wavelength compatible with cost-effective Si-based detectors. Excitation-power-dependent
and time-resolved micro-photoluminescence measurements were performed at low temperature (7 K)
to characterize the optical properties of the excitonic states, which are attributed to good quantum
confinement in the GaAs quantum dots.
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