Resistive Switching Behavior in Ti/MnO2/Pt Structure for Nonvolatile Memory Devices

Title
Resistive Switching Behavior in Ti/MnO2/Pt Structure for Nonvolatile Memory Devices
Authors
이전국양민규최선영
Keywords
resistive switching; MnO2; Ta2O5; TiN; oxygen reservior
Issue Date
2012-04
Publisher
2012 춘계 세라믹학회
URI
http://pubs.kist.re.kr/handle/201004/42298
Appears in Collections:
KIST Publication > Conference Paper
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