Design of nano-device using hi ghly stable insulator film

Title
Design of nano-device using hi ghly stable insulator film
Authors
장지혜김진식강동훈이상엽박정호신현준
Keywords
nanofabrication; nanowire device; insulator film; SiO2-Si3N4-SiO2 layers; PECVD
Issue Date
2012-04
Publisher
제14회 한국 MEMS 학술대회
Citation
, 249-250
Abstract
In this paper, we introduce a fabrication of a fine nano device which contains 100nm, 200nm, and 400nm width nanowires. The device can be used as a nano electrode array for nano-particle manipulation. This device requires insulator layers with high stability from the mechanical and thermal stress according to additional fabrication process due to its ultra small dimension and high refindness. SiO2-Si3N4-SiO2 triple layers by Plasma-Enhanced Chemical Vapor Deposition (PECVD) were used as a high stable insulating layer. The insulator film was robust from mechanical and thermal stress during the post procedures and treatment, facilitating each electrode insulated from each other. In this way, we can fabricate utmost delicate nano-device which is mechanically and thermally stable and robust with high yield.
URI
http://pubs.kist.re.kr/handle/201004/42324
Appears in Collections:
KIST Publication > Conference Paper
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