Preparation and application to In-rich absorption layer by using three-step electrodeposition of CuInSe2, and Cu and In metals

Title
Preparation and application to In-rich absorption layer by using three-step electrodeposition of CuInSe2, and Cu and In metals
Authors
박영일이하나이도권김진영정증현김동환김홍곤
Keywords
CIGS; CIS; non-vacuum; electrodeposition; substrate-type
Issue Date
2011-11
Publisher
공업화학 (Applied Chemistry for Engineering)
Abstract
A CuInSe2 (CIS) layer can be solar active even in a film thinner than 2μm because of its high absorption coefficient. Electrodeposition is one way to form a uniform CIS active layer under a non-vacuum condition. CIS films can be prepared by electroplating metal precursors simultaneously or sequentially and by thermal annealing thereafter. We made CIS films on Mo-coated glass substrates by sequentially electrodepositing a single component of Cu, In and Se using chloride solutions. This study revealed important variables affecting good morphology of a CIS film, such as elemental composition, pH, complexing agents, deposition potential and time, temperature, and sequence of electroplating as well as selenization conditions for intermixing the elements and enhancing the crystallinity of CIS.
URI
http://pubs.kist.re.kr/handle/201004/42326
ISSN
12250112
Appears in Collections:
KIST Publication > Conference Paper
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