The charge trapping characteristic of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

Title
The charge trapping characteristic of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application
Authors
정지심라상호김언기정윤장정윤수최정혜황철성
Keywords
a-IGZO; charge trap; memory application
Issue Date
2012-05
Publisher
Applied physics letters
Citation
VOL 100, NO 18, 183503-1-183503-4
Abstract
The charge trapping characteristics of 30-nm-thick Si3N4 and 3-nm-thick Al2O3 layers between amorphous In-Ga-Zn-O thin films and 100-nm-thick blocking oxides made of thermal SiO2 were examined. The Si3N4 layer showed several discrete trap levels with relatively low density, while the Al2O3 layer showed a higher trap density with continuous distribution for electron trapping. When no tunneling oxide was adopted, the trapped carriers were easily detrapped, even at room temperature. Adoption of a 6-nm-thick SiO2 tunneling layer grown by atomic layer deposition largely improved the retention of the trapped charges and retained ~60% of the trapped charges even after 10 000 s.
URI
http://pubs.kist.re.kr/handle/201004/42350
ISSN
00036951
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KIST Publication > Article
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