Threshold resistive and capacitive switching behavior in binary amorphous GeSe

Title
Threshold resistive and capacitive switching behavior in binary amorphous GeSe
Authors
정두석임형광박군호황철성이수연정병기
Keywords
threshold switching; chalcogenide
Issue Date
2012-05
Publisher
Journal of applied physics
Citation
VOL 111, NO 10, 102807-1-102807-8
Abstract
A threshold switching (TS) event in a binary amorphous GeSe film placed between Pt top and bottom electrodes was examined. This GeSe film exhibits fast (<40 ns) TS behavior. The observed TS of the resistance was found to be accompanied with the TS of the capacitance. A mechanism for the TS of the GeSe film was suggested by revisiting the previous controversy about the thermal versus non-thermal electronic mechanism. The non-thermal electronic mechanism envisaging the double-injection of electronic carriers can qualitatively account for the measured threshold resistive and capacitive switching, whereas the TS behavior simulated using the thermal mechanism is inconsistent with the experimental observation.
URI
http://pubs.kist.re.kr/handle/201004/42386
ISSN
00218979
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KIST Publication > Article
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