Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
- Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
- 라상호; 정지심; 정윤수; 정윤장; 김언기; 황은석; 박병건; 박태주; 최정혜; 황철성
- Issue Date
- Applied physics letters
- VOL 100, NO 20, 203510-1-203510-5
- In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310 nm channel length were fabricated using a low temperature process (<300  °C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 104 and a threshold voltage of 1.7 V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance.
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