Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process

Title
Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature process
Authors
라상호정지심정윤수정윤장김언기황은석박병건박태주최정혜황철성
Issue Date
2012-05
Publisher
Applied physics letters
Citation
VOL 100, NO 20, 203510-1-203510-5
Abstract
In this work, vertically integrated amorphous-In2Ga2ZnO7 (a-IGZO) thin film transistors (V-TFTs) with 310&#8201;nm channel length were fabricated using a low temperature process (<300&#8201;&#8201;°C), and their device performance was evaluated. The fabricated V-TFTs show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 104 and a threshold voltage of 1.7&#8201;V. The influence of the vertical structure on device performance was analyzed in detail. In addition, current polarity characteristics that arise from different metal/a-IGZO contacts were also examined. The non-optimum performance of the V-TFTs was attributed to the fringing-field effect, high defect density, and large source/drain contact resistance.
URI
http://pubs.kist.re.kr/handle/201004/42408
ISSN
00036951
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KIST Publication > Article
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