Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy

Title
Self-Assembled Growth of GaAs Anti Quantum Dots in InAs Matrix by Migration Enhanced Molecular Beam Epitaxy
Authors
이은혜송진동김수연한일기장수경이정일
Keywords
Anti Quantum Dots (AQDs); GaAs; InAs; Migration Enhanced Epitaxy (MEE)
Issue Date
2012-02
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 12, NO 2, 1480-1482
Abstract
Self-assembled GaAs anti quantum dots (AQDs) were grown in an InAs matrix via migration enhanced molecular beam epitaxy. The transmission electron microscopy image showed that the 2D to 3D transition thickness is below 1.5 monolayers (MLs) of GaAs coverage. The average diameter and height of the GaAs AQDs for 1.5 ML GaAs coverage taken from the atomic force microscopy image were ~29.0 nm and 1.4 nm, respectively. The density was ~6.0×1010 cm−2. The size of the AQDs was enlarged in the InAs matrix compared with that on the surface. These results indicate that the GaAs AQDs in the InAs matrix under tensile strain can be effectively formed with the assistance of the migration enhanced epitaxy method.
URI
http://pubs.kist.re.kr/handle/201004/42436
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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