Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
- Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
- 강대환; 김난영; 정홍식; 정병기
- phase change memory; crystallization; set operation
- Issue Date
- Applied physics letters
- VOL 100, NO 6, 063508-1-063508-3
- We experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the
set operation in non-volatile phase change memory commences after threshold switching event. It
is also shown that the nucleation and growth rates have opposite behaviors with the increase of set
operation power: the incubation time in nucleation stage can be minimized at higher power,
whereas the percolation time in growth stage is smaller at lower power. Based on these results, we
introduce a two-step set pulse of high-power nucleation and low-power growth making the set
write operation much faster than conventional simple rectangular or slow-quenched form.
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