Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory

Title
Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory
Authors
강대환김난영정홍식정병기
Keywords
phase change memory; crystallization; set operation
Issue Date
2012-02
Publisher
Applied physics letters
Citation
VOL 100, NO 6, 063508-1-063508-3
Abstract
We experimentally demonstrate that the crystallization process of Ge-Sb-Te crystallites during the set operation in non-volatile phase change memory commences after threshold switching event. It is also shown that the nucleation and growth rates have opposite behaviors with the increase of set operation power: the incubation time in nucleation stage can be minimized at higher power, whereas the percolation time in growth stage is smaller at lower power. Based on these results, we introduce a two-step set pulse of high-power nucleation and low-power growth making the set write operation much faster than conventional simple rectangular or slow-quenched form.
URI
http://pubs.kist.re.kr/handle/201004/42453
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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