Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate

Title
Fabrication of high-density In3Sb1Te2 phase change nanoarray on glass-fabric reinforced flexible substrate
Authors
윤종문신동옥You Yin서현국김대운김용인진정호김용태배병수김상욱이정용
Keywords
chalcogenide; In3Sb1Te2; phase change nanoarray; GFR flexible substrate
Issue Date
2012-06
Publisher
Nanotechnology
Citation
VOL 23, NO 25, 255301-1-255301-9
Abstract
Mushroom-shaped phase change memory (PCM) consisting of a Cr/In3Sb1Te2 (IST)/TiN (bottom electrode) nanoarray was fabricated via block copolymer lithography and single-step dry etching with a gas mixture of Ar/Cl2. The process was performed on a high performance transparent glass-fabric reinforced composite film (GFR Hybrimer) suitable for use as a novel substrate for flexible devices. The use of GFR Hybrimer with low thermal expansion and flat surfaces enabled successful nanoscale patterning of functional phase change materials on flexible substrates. Block copolymer lithography employing asymmetrical block copolymer blends with hexagonal cylindrical self-assembled morphologies resulted in the creation of hexagonal nanoscale PCM cell arrays with an areal density of approximately 176 Gb/in2.
URI
http://pubs.kist.re.kr/handle/201004/42589
ISSN
09574484
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KIST Publication > Article
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