Growth of InP/InGaP quantum structure for the 808-nm wavelength emission
- Growth of InP/InGaP quantum structure for the 808-nm wavelength emission
- 김수연; 이은혜; 송진동; 한일기; 이정일; 김태환
- InP; MBE; InGaP; 808nm
- Issue Date
- Quantum Dot 2012
- Quantum structures with 808-nm-wavelength emissions have been very attractive due to their promising applications for next-generation medical instruments, pumping sources for the solid state lasers, and fiber-optic optical amplifiers.1-3 Among various kinds of quantum structures, InAlAs/AlGaAs quantum structures have emerged as excellent candidates as an active layer for the laser diodes with 808-nm-wavelength emissions. However, the inclusion of the 40% of AlGaAs active layer in the InAlAs/AlGaAs quantum structures has inherent problems of complicate growth process and surface oxidation. Therefore, InP/InGaP quantum structures without Al molecules have been introduced to remove the surface oxidation. This paper reports data for the effects of growth parameters on the structural and optical properties of InP/InGaP quantum structures for 808-nm-wavelength emissions. InP/InGaP quantum structures were grown on GaAs (100) substrates by migration enhanced molecular beam epitaxy. The effects of growth conditions on the structural and the optical properties of InP/InGaP quantum structures were investigated. Scanning electron microscopy and atomic force microscopy images showed that two-dimensional InP/InGaP quantum structures were transited to one-dimensional structures with increasing repetition cycle. Photoluminescence spectra showed that optical properties of InP/InGaP quantum structures were significantly affected by various migration enhanced epitaxy repetition number and growth temperature.
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