The Effect of Annealing in Controlled Vapor Pressure on the Thermoelectric Properties of RF-Sputtered Bi2Te3 Film
- The Effect of Annealing in Controlled Vapor Pressure on the Thermoelectric Properties of RF-Sputtered Bi2Te3 Film
- 김효정; 임주혁; 최원철; 박찬; 김진상
- Te vapor pressure; annealing; bismuth telluride thin film; thermoelectric
- Issue Date
- Journal of electronic materials
- VOL 41, NO 6, 1519-1523
- To investigate the effect of annealing in controlled atmosphere on the thermoelectric properties of Bi-Te film, Te-deficient Bi-Te film was deposited by sputtering, and then annealed with various Bi-Te alloy powders with different Te concentrations in a closed system at 250°C for 24 h. Bi-Te phases other than Bi2Te3 in the as-deposited film could be removed when the film was annealed with Bi-Te source powder containing 62 at.% or higher content of Te. At the same time, the values of Seebeck coefficient and carrier concentration of the films approach -105 μV/K and 3 × 1019 cm-3 to 6 × 1019 cm-3, respectively. This result indicates that mass transport of Te to the film takes place, resulting in the formation of Bi2Te3 phase and reduction of the amount of p-type carriers due to compositional change of the film from Te-deficient to stoichiometric. Annealing in controlled Te-vapor atmosphere is an effective method to improve the thermoelectric properties of Bi-Te film by changing the composition and phase of Te-deficient film to stoichiometric Bi2Te3 film.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.