Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures
- Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures
- Oleksii Kopylov; 이정일; 한일기; 최원준; 송진동; Ina Yeo
- InAs; quantum dots; Migration-enhanced molecular beam epitaxy; Electron-phonon interaction; Temperature dependence of energy band gap
- Issue Date
- Journal of the Korean Physical Society
- VOL 60, NO 10, 1828-1832
- We analyzed the temperature-dependent variation of the peak energies in the photoluminescence
of InAs/GaAs quantum dots and InAs/In0.2Ga0.8As/GaAs quantum dots in an asymmetric well.
The InAs dots were grown by using migration-enhanced molecular beam epitaxy. The peak emission
energies decreased monotonously with increasing temperature over the range of measurements
from 13 K to 225 K. The temperature dependence of the peak energy was successfully fitted with
two analytic models, namely, the phenomenological Varshni equation and the semi-empirical Fan
equation based on electron-phonon statistics, respectively. The physical meaning of the Varshni
coefficients is discussed in terms of the phonon energy and the strain in the nanostructures.
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