Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures

Title
Temperature Dependence of the Excitonic Energy Band Gap in In(Ga)As Nanostructures
Authors
Oleksii Kopylov이정일한일기최원준송진동Ina Yeo
Keywords
InAs; quantum dots; Migration-enhanced molecular beam epitaxy; Electron-phonon interaction; Temperature dependence of energy band gap
Issue Date
2012-05
Publisher
Journal of the Korean Physical Society
Citation
VOL 60, NO 10, 1828-1832
Abstract
We analyzed the temperature-dependent variation of the peak energies in the photoluminescence of InAs/GaAs quantum dots and InAs/In0.2Ga0.8As/GaAs quantum dots in an asymmetric well. The InAs dots were grown by using migration-enhanced molecular beam epitaxy. The peak emission energies decreased monotonously with increasing temperature over the range of measurements from 13 K to 225 K. The temperature dependence of the peak energy was successfully fitted with two analytic models, namely, the phenomenological Varshni equation and the semi-empirical Fan equation based on electron-phonon statistics, respectively. The physical meaning of the Varshni coefficients is discussed in terms of the phonon energy and the strain in the nanostructures.
URI
http://pubs.kist.re.kr/handle/201004/42651
ISSN
03744884
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