Properties of ZnO Thin Films Co-Doped with Hydrogen and Fluorine

Title
Properties of ZnO Thin Films Co-Doped with Hydrogen and Fluorine
Authors
김용현김진수정증현박종극백영준이경석정병기김동환성태연김원목
Keywords
Doped ZnO; Fluorine; Hydrogen; rf Magnetron Sputtering; Transparent Conducting Oxide
Issue Date
2012-04
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 12, NO 4, 3665-3668
Abstract
ZnO films co-doped with fluorine and hydrogen were prepared on Corning glass by radio frequency magnetron sputtering of ZnO targets with varying amounts of ZnF2 in H2/Ar gas mixtures of varying H2 content. The ZnO films' electrical, optical, and structural properties in combination with their compositional properties were investigated. A small addition of H2 to the sputtering gas caused a drastic increase of Hall mobility with a marginal increase in carrier concentration, indicating an effective passivation of grain boundaries due to hydrogenation. For further increase of H2 in sputter gas, the Hall mobility remained at a relatively constant level while the carrier concentration increased steadily. Most of the ZnO films co-doped with fluorine and hydrogen showed average transmittance higher than 83% in the 400-800 nm range, while the average absorption coefficients were lower than 600 cm−1, implying very low absorption loss in these films. It was discovered that the fabrication of ZnO films with a Hall mobility higher than 40 ㎠/Vs and a very low absorption loss in the visible range is possible by co-doping hydrogen and fluorine.
URI
http://pubs.kist.re.kr/handle/201004/42708
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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