MBE growth of vertically-aligned (In)GaAs nanowires using Au colloidal nanoparticle catalyst on Si(111) and GaAs(001) substrates

Title
MBE growth of vertically-aligned (In)GaAs nanowires using Au colloidal nanoparticle catalyst on Si(111) and GaAs(001) substrates
Authors
배민환이은혜송진동김수연윤재진최경진이정일박원일
Keywords
(In)GaAs; nanowire; MBE
Issue Date
2012-05
Publisher
Quantum Dot 2012
Abstract
- We succeeded in the growth of (In)GaAs NW on Si (111) and GaAs (001) substrate. - In NW growth of Si (111), As flux has the largest effect on the NW morphology. - The (In)GaAs NWs have predominantly ZB crystal structure in (111) direction with stacking faults. - Substrate has the largest effect on the NW density. - Reflectance is reduced with NW growth time. - The results of this experiment will be applicable to the NW solar cell.
URI
http://pubs.kist.re.kr/handle/201004/42715
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KIST Publication > Conference Paper
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