Epitaxial Growth of InGaN Nanowire Arrays For Light Emitting Diode

Title
Epitaxial Growth of InGaN Nanowire Arrays For Light Emitting Diode
Authors
Chris HahnZhaoyu ZhangAnthony FuCheng Hao Wu황윤정Daniel J. GargasPeidong Yang
Keywords
InGaN nanowires; halide chemical vapor deposition; epitaxy; light-emitting diode; tunable emission
Issue Date
2011-05
Publisher
ACS Nano
Citation
VOL 5, NO 5, 3970-3976
Abstract
Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of InxGa1-xN nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al2O3(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the Æ002æ direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from InxGa1-xN nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.
URI
http://pubs.kist.re.kr/handle/201004/42737
ISSN
19360851
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KIST Publication > Article
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