Comparison of thermal property between Ge2Sb2Te5 and In3Sb1Te2 alloys for phase-change memory

Comparison of thermal property between Ge2Sb2Te5 and In3Sb1Te2 alloys for phase-change memory
Issue Date
European Materials Research Society (E-MRS), 2012
Although Ge2Sb2Te5 (GST) is dominantly well known phasechange material, GST has some limitations such as high melting temperature and low crystallization temperature. The high melting temperature might cause high power consumption during the reset operation and thermal crosstalk between adjacent cells is caused by low crystallization temperature. Therefore, it is essential to reduce the melting temperature and raise the crystallization temperature also for more scaling and reliable operation of PRAM. Furthermore, a new emerging multi-level coding phase change memory (MLC-PRAM) requires new chalcogenide materials to overcome lack of multi-bit storage capability. Based on the above mentioned purpose, in this work, we have compared thermal properties of a new chalcogenide material, In3Sb1Te2 (IST) with those of GST. The IST has an atomic structure (S.G. #225, Fm-3m, a=b=c=6.12 Å) that is nearly the same as the GST (a=b=c=6.03 Å). The melting temperature is 626℃ and the crystallization temperature is 292℃, which reveal that thermal stability of IST PRAM will be superior to the GST PRAM. Therefore, we have fabricated IST and GST PRAM cells and operated both samples with the 100 cycles of set/reset pulses. After that, the cross sections of PRAM cells are investigated with high resolution transmission electron microscopy. As a result, the phase changing volume of IST is relatively smaller than that of the GST due to the difference of thermal diffusivities of both materials.
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