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dc.contributor.authorDipak V. Shinde-
dc.contributor.authorIseul Lim-
dc.contributor.author김창삼-
dc.contributor.author이중기-
dc.contributor.authorRajaram S. Mane-
dc.contributor.authorSung-Hwan Han-
dc.date.accessioned2015-12-03T00:49:20Z-
dc.date.available2015-12-03T00:49:20Z-
dc.date.issued201207-
dc.identifier.citationVOL 542, 66-69-
dc.identifier.issn00092614-
dc.identifier.other37486-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/42752-
dc.description.abstractWe report on fabrication of upright-standing SnO2 nanowalls aligned on FTO substrates by a facile wet chemical method at low temperature. These nanowalls are dual-photosensitized with CdS quantum dots and Z907 dye molecules in order to construct panchromatic dye-sensitized solar cells. We demonstrate that thin CdS quantum dot layer not only acts as a blocking layer preventing recombination of charge carriers, but also contributes as a light absorber. A 158% improvement in power conversion efficiency is observed, which is attributed to improved light absorption, reduced recombination and improved charge collection in presence of CdS quantum dot interlayer.-
dc.publisherChemical physics letters-
dc.subjectUpright-standing SnO2 nanowalls-
dc.subjectFabrication-
dc.subjectdual-photosensitization-
dc.subjectphotovoltaic properties-
dc.titleUpright-standing SnO2 nanowalls: Fabrication, dual-photosensitization and photovoltaic properties-
dc.typeArticle-
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