Electrical and microstructural characteristics of multilayer stacking with graphene and InSbTe
- Electrical and microstructural characteristics of multilayer stacking with graphene and InSbTe
- 김현수; 김용태; 성만영
- Graphene; InSbTe; Phase change materials
- Issue Date
- European Materials Research Society (E-MRS), 2012
- Chalcogenide phase change materials, such as Ge2Sb2Te5,
GeBiTe and GeTe usually have two crystalline phases that exhibit vastly
different electrical resistance and fast phase transition kinetics from
amorphous to crystalline. Recently, another candidate of phase change
materials, InSbTe (IST), has been investigated for the multi-level cell (MLC)
properties, which is caused by changing the multi crystalline phase.
However, for the practical application of IST the resistance difference should
be over than 2 orders of magnitude between each state, which leads to
reliable multi-level operation. In this study, we have tried to investigate the
electrical and microstructural characteristics of the graphene and the IST
multilayers by stacking layer by layer to overcome smaller resistance
difference between each level. The multi-stacking structure shows that the
resistance of each level is distinguishably separated and the difference is 4
orders of magnitude due to the unique thermal and electrical properties of
graphene layers. We will discuss the mechanism of multi-level operation and
the microstructural behaviors of multi-stacking structures. Especially, the
interface of graphene/IST is investigated by atomic level high resolution
transmission electron microscopy (TEM), and the temperature profile of
memory cell is simulated by ABAQUS to investigate the thermal properties
of graphene/IST interface and encapsulated insulator.
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- KIST Publication > Conference Paper
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