Electrical and microstructural characteristics of multilayer stacking with graphene and InSbTe

Electrical and microstructural characteristics of multilayer stacking with graphene and InSbTe
Graphene; InSbTe; Phase change materials
Issue Date
European Materials Research Society (E-MRS), 2012
Chalcogenide phase change materials, such as Ge2Sb2Te5, GeBiTe and GeTe usually have two crystalline phases that exhibit vastly different electrical resistance and fast phase transition kinetics from amorphous to crystalline. Recently, another candidate of phase change materials, InSbTe (IST), has been investigated for the multi-level cell (MLC) properties, which is caused by changing the multi crystalline phase. However, for the practical application of IST the resistance difference should be over than 2 orders of magnitude between each state, which leads to reliable multi-level operation. In this study, we have tried to investigate the electrical and microstructural characteristics of the graphene and the IST multilayers by stacking layer by layer to overcome smaller resistance difference between each level. The multi-stacking structure shows that the resistance of each level is distinguishably separated and the difference is 4 orders of magnitude due to the unique thermal and electrical properties of graphene layers. We will discuss the mechanism of multi-level operation and the microstructural behaviors of multi-stacking structures. Especially, the interface of graphene/IST is investigated by atomic level high resolution transmission electron microscopy (TEM), and the temperature profile of memory cell is simulated by ABAQUS to investigate the thermal properties of graphene/IST interface and encapsulated insulator.
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