Electrical characteristics of IGBT using a field stop trench gate structure

Title
Electrical characteristics of IGBT using a field stop trench gate structure
Authors
강이구정은식김용태
Keywords
IGBT; power device; Field stop; Trench gate
Issue Date
2012-06
Publisher
Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD 2012)
Citation
, 12-15
URI
http://pubs.kist.re.kr/handle/201004/42762
Appears in Collections:
KIST Publication > Conference Paper
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