Effect of spin relaxation rate on the interfacial spin depolarization in
- Effect of spin relaxation rate on the interfacial spin depolarization in
- 전건록; 민병철; 박윤호; 조영훈; 박승영; 박창엽; 신성철
- Issue Date
- Applied physics letters
- VOL 101, NO 2, 022401-1-022401-5
- Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC)
contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from
local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in
both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of
the ISD depending on the host SC. The precession and relaxation of spins in different SCs
exposed to the local fields from more or less the same ferromagnets give rise to a notably
different ratio of the inverted Hanle signal to the normal one. A model calculation of the ISD,
considering the spin precession due to the local field and the spin relaxation in the host SC,
explains the temperature and bias dependence of the ISD consistently.
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