Silicon spintronics with ferromagnetic tunnel devices

Title
Silicon spintronics with ferromagnetic tunnel devices
Authors
R. JansenS. P. DashS. Sharma민병철
Issue Date
2012-08
Publisher
Semiconductor science and technology
Citation
VOL 27, NO 8, 083001-1-083001-26
Abstract
In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.
URI
http://pubs.kist.re.kr/handle/201004/42801
ISSN
02681242
Appears in Collections:
KIST Publication > Article
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