CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells

Title
CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells
Authors
Rajaram S. ManeDipak V. ShindeSeog Joon YoonSwapnil B. Ambade이중기Sung-Hwan Han
Keywords
photoelectrochemical cells; ZnO-CdSe; CdS buffer-layer; CdSe nanoparticles
Issue Date
2012-07
Publisher
Applied physics letters
Citation
VOL 101, NO 3, 0033906-1-0033906-3
Abstract
Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time.
URI
http://pubs.kist.re.kr/handle/201004/42814
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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