Numerical Study on passive crossbar arrays employing threshold switches as cell-selection-devices

Title
Numerical Study on passive crossbar arrays employing threshold switches as cell-selection-devices
Authors
정두석안형우김수동안명기이수연정병기
Keywords
threshold switching; crossbar arrays; chalcogenides; memory switching
Issue Date
2012-04
Publisher
Electronic materials letters
Citation
VOL 8, NO 2, 169-174
Abstract
A read-out voltage margin of crossbar-array-based passive non-volatile memory employing one threshold switch and one memory switch (resistor) (1TS1R) unit structure was numerically evaluated for the worst-case pattern with respect to the row and column number of a crossbar array. The threshold switching behavior of amorphous GeSe, which has been recently reported by Jeong et al., was taken for the evaluation of the 1TS1R crossbar array. The calculation results identified that a pull-up voltage is of importance because of the highly nonlinear current-voltage behavior of amorphous GeSe in the high resistance state.
URI
http://pubs.kist.re.kr/handle/201004/42863
ISSN
17388090
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE