Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys

Title
Infrared spectroscopic ellipsometry of Ge-doped SbTe alloys
Authors
강태동심경익김재훈우철정병기이호선
Keywords
Phase change random access memory; Germanium; Doped antimony telluride; dielectric function; band gap; effective mass; sputtering
Issue Date
2012-07
Publisher
Thin solid films
Citation
VOL 520, NO 19, 6221-6225
Abstract
We grew Ge-SbTe films on glass substrates using RF sputtering deposition. We measured the dielectric function of the Ge-doped SbTe thin films in the infrared and visible spectral region. By applying linear extrapolation to the absorption coefficient, we obtained accurate band gap energy values, which decreased with increasing Te composition. Using the Drude model, we estimated their resistivity and mean scattering time. Compared to the Hall effect parameters of carrier concentration andmobility, we estimated the effectivemass of holes for the Ge-SbTe thin films.
URI
http://pubs.kist.re.kr/handle/201004/42864
ISSN
00406090
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE