Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs
- Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs
- 임주영; 송진동; 양해석
- InSb; GaAs; Defects; Interfaces; Nanostructures; Molecular beam epitaxy; Hall devices; Raman
- Issue Date
- Thin solid films
- VOL 520, NO 21, 6589-6594
- In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of ~ 0.5 μm above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-μm-thick InSb layer, grown at the substrate temperature of 400 °C and under the Sb flux of 1.5 × 10− 6 Torr, shows the electron mobility as high as 67,890 ㎠/Vs.
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