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dc.contributor.authorM. H. Abdellatif-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author조남기-
dc.date.accessioned2015-12-03T00:49:58Z-
dc.date.available2015-12-03T00:49:58Z-
dc.date.issued201207-
dc.identifier.citationVOL 12, NO 7, 5774-5777-
dc.identifier.issn15334880-
dc.identifier.other37647-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/42894-
dc.description.abstractThe Photoluminescence spectra (PL), their temperature and power dependence were investigated for the ground state in InAs quantum dots (QDs) embedded in InGaAs asymmetric quantum well (Asym. QW). In-atom segregation is well known phenomena in such structures, which result in altering the inter-atomic distances; as a consequence the thermo-dynamical parameters change as well, namely Debye temperature. The bigger value of Debye temperature for the studied sample with respect to the corresponding bulk value is attributed to In/Ga inter-diffusion during growth. The inter-diffusion process causes non-radiative defects in the sample. As a consequence, rapid decrease in the QDs integrated emission intensity as the temperature increases was occurred.-
dc.publisherJournal of nanoscience and nanotechnology-
dc.subjectInAs-
dc.subjectQuantum Dot-
dc.subjectVarshni Relation-
dc.subjectAsymetric InGaAs/GaAs Quantum Well-
dc.subjectInAs Quantum Dot-
dc.subjectIn/Ga Inter-Diffusion-
dc.titleIn/Ga Inter-Diffusion in InAs Quantum Dot in InGaAs/GaAs Asymmetric Quantum Well-
dc.typeArticle-
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