Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices

Title
Characterization of Cu(InGa)Se2 (CIGS) thin films in solar cell devices
Authors
임원철이지혜원성옥이연희
Keywords
CIGS; quantitative analysis; depth profiling; dynamic SIMS; ICP-AES; XRF; AFM; EPMA
Issue Date
2012-06
Publisher
Surface and interface analysis : SIA
Citation
VOL 44, 724-728
Abstract
Cu(InGa)Se2 (CIGS) thin-film solar cells are expected to be the next generation of solar cells because of their economical manufacturing cost and high yield process. In order to develop an efficient thin-film CIGS structure, however, a quantitative composition analysis of major elements is necessary. Quantitative analysis of CIGS was carried out by means of inductively coupled plasma-atomic emission spectrometry (ICP-AES), x-ray fluorescence, a wavelength-dispersed electron probe microanalysis (EPMA), and dynamic SIMS. The ratio of each element that comprises CIGS was determined by an ICP-AES analysis, which was performed by dissolving the entire CIGS sample. A reproducible and rapid semi-quantified analysis of CIGS can be conducted by using x-ray fluorescence and electron probe microanalysis and comparing the results to the certified composition of ICP-AES. Quantitative analysis data for CIGS were also obtained from SIMS depth profiling, and the relative sensitivity factor value was calculated by using the mole fraction of ICP-AES as a reference value for the composition. The atomic force microscopy results indicate that the reproducibility of the SIMS analysis was related to the surface roughness of the CIGS sample.
URI
http://pubs.kist.re.kr/handle/201004/42909
ISSN
01422421
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KIST Publication > Article
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