Effect of Bi2O3 doping on the sintering temperature and microwave dielectric properties of LiAlSiO4 ceramics

Title
Effect of Bi2O3 doping on the sintering temperature and microwave dielectric properties of LiAlSiO4 ceramics
Authors
정병직정미리권상효김진성남산최지원황성주
Issue Date
2012-06
Publisher
Journal of the American Ceramic Society
Citation
VOL 95, NO 6, 1811-1813
Abstract
When Bi2O3 was added to LiAlSiO4 ceramics, Bi12SiO20 secondary phase was formed. Since the melting temperature of Bi12SiO20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAl- SiO4 ceramics. When 15.0 mol% Bi2O3 was added, the LiAl- SiO4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi2O3 they could even be sintered at 875°C. The 15.0 mol% Bi2O3-doped LiAlSiO4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low er of 4.3, a high Q 3 f of 62 430 GHz and a small τf of -16.21 ppm/℃.
URI
http://pubs.kist.re.kr/handle/201004/42998
ISSN
00027820
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