Large-sale synthesis of pure and doped graphene by arc-discharge

Title
Large-sale synthesis of pure and doped graphene by arc-discharge
Authors
오인섭이창협박성찬구본철김명종
Keywords
graphene; arc-discharge; doping
Issue Date
2012-08
Publisher
Nano Korea 2012 Graphene Symposium
Abstract
Arc discharge used to be an effective method to synthesize highly crystalline carbon nanotubes. Arc discharge synthesis of graphene was attempted by a few groups, but it is in premature stage thus needs more improvement [1,2,3]. Arc graphene synthesis has been attempted by under a variety of buffer gases by using metal catalysts. The condition for generating arc-discharge was 210 torr, 32~35 volts and 90A. In order to improve conductivity of graphene, in-situ N-type doping was attempted by adopting a dopant (4-amino benzoic acid), and purification by heat treatment was followed at 450℃ for 90 min under air atmosphere. The electrical conductivity of purified N-doped graphene was approximately 600 times higher than undoped as-grown materials. The XPS data of N-doped graphene synthesized by using a dopant demonstrated that the concentration of nitrogen was 1.6%. Defect density of N-doped graphene has been further decreased by an addition of trace amount of catalysts.
URI
http://pubs.kist.re.kr/handle/201004/43002
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KIST Publication > Conference Paper
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