Effect of oxygen annealing on the set voltage distribution Ti/MnO2/Pt resistive switching devices

Title
Effect of oxygen annealing on the set voltage distribution Ti/MnO2/Pt resistive switching devices
Authors
최선영양민규이전국
Keywords
resistive switching; MnOx; oxygen annealing; voltage distribution
Issue Date
2012-08
Publisher
한국재료학회지
Citation
VOL 22, NO 8, 385-389
Abstract
Significant improvements in the switching voltage distribution are required for the development of unipolar resistive memory devices using MnOx thin films. The Vset of the as-grown MnOx film ranged from 1 to 6.2 V, whereas the Vset of the oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an MnOx film leads to an increase in Mn4+ content at the MnOx film surface with a subsequent change in the Mn4+/Mn3+ ratio at the surface. This was attributed to the change in Mn4+/Mn3+ ratios at the MnOx surface and to grain growth. Oxygen annealing is a possible solution for improving the switching voltage distribution of MnOx thin films. In addition, crystalline MnOx can help stabilize the Vset and Vreset distribution in memory switching in a Ti/MnOx/Pt structure. The improved uniformity was attributed not only to the change of the crystallinity but also to the redox reaction at the interface between Ti and MnOx.
URI
http://pubs.kist.re.kr/handle/201004/43010
ISSN
12250562
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE