Effect of oxygen annealing on the set voltage distribution Ti/MnO2/Pt resistive switching devices
- Effect of oxygen annealing on the set voltage distribution Ti/MnO2/Pt resistive switching devices
- 최선영; 양민규; 이전국
- resistive switching; MnOx; oxygen annealing; voltage distribution
- Issue Date
- VOL 22, NO 8, 385-389
- Significant improvements in the switching voltage distribution are required for the development of unipolar resistive
memory devices using MnOx thin films. The Vset of the as-grown MnOx film ranged from 1 to 6.2 V, whereas the Vset of the
oxygen-annealed film ranged from 2.3 to 3 V. An excess of oxygen in an MnOx film leads to an increase in Mn4+ content
at the MnOx film surface with a subsequent change in the Mn4+/Mn3+ ratio at the surface. This was attributed to the change
in Mn4+/Mn3+ ratios at the MnOx surface and to grain growth. Oxygen annealing is a possible solution for improving the
switching voltage distribution of MnOx thin films. In addition, crystalline MnOx can help stabilize the Vset and Vreset distribution
in memory switching in a Ti/MnOx/Pt structure. The improved uniformity was attributed not only to the change of the
crystallinity but also to the redox reaction at the interface between Ti and MnOx.
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