Enhancement of the Hall Mobility in Hydrogen-ion-irradiated ZnO Films
- Enhancement of the Hall Mobility in Hydrogen-ion-irradiated ZnO Films
- 여창수; 정권범; J.S.Park; 송종한
- ZnO film; Ion irradiation; Electronic structure; Hall mobility; Hydrogen
- Issue Date
- Journal of the Korean Physical Society
- VOL 60, NO 3, L307-L310
- RF-sputtered ZnO films were irradiated with hydrogen ions by using an ion accelerator at 110 keV.
The physical and the electrical characteristics of the irradiated ZnO films were studied as functions of
the hydrogen-ion irradiation dose. The Hall measurement indicated that the carrier concentration
had small changes regardless of irradiated hydrogen amount, but the mobility was dramatically
enhanced after irradiation of 1015 atoms/㎠. Even when the irradiated hydrogen dose was increased,
the crystalline structure had no transformation and the composition was preserved. On
the other hand, the electronic structure, measured by using X-ray absorption spectroscopy, exhibited
a modification of the molecular orbital structure in the ZnO films irradiated at doses above
1015 atoms/㎠. These distortions of the molecular orbital in the conduction band could lead to a
mobility enhancement without a structural transformation.
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