Thiophene and Selenophene Donor-Acceptor Polyimides as Polymer Electrets for Nonvolatile Transistor Memory Devices

Title
Thiophene and Selenophene Donor-Acceptor Polyimides as Polymer Electrets for Nonvolatile Transistor Memory Devices
Authors
Ying-Hsuan Chou유남호Tadanori KurosawaWen-Ya LeeTomoya HigashiharaMitsuru UedaWen-Chang Chen
Keywords
polyimide; polymer memory; selenophene
Issue Date
2012-08
Publisher
Macromolecules
Citation
VOL 45, NO 17, 6946-6956
Abstract
We report the nonvolatile memory characteristics of n-type N,N′-bis(2-phenylethyl)perylene-3,4:9,10- tetracarboxylic diimide (BPE-PTCDI) based organic fieldeffect transistors (OFET) using the polyimide electrets of poly[2,5-bis(4-aminophenylenesulfanyl)selenophene−hexafluoroisopropylidenediphthalimide] (PI(APSP-6FDA)), poly- [2,5-bis(4-aminophenylenesulfanyl)thiophene−hexafluoroisopropylidenediphthalimide] (PI(APST-6FDA)), and poly(4,4′- oxidianiline-4,4′-hexafluoroisopropylidenediphthalic anhydride) (PI(ODA-6FDA)). Among those polymer electrets, the OFET memory device based on PI(APSP-6FDA) with a strong electron-rich selenophene moiety exhibited the highest fieldeffect mobility and Ion/Ioff current ratio of 105 due to the formation of the large grain size of the BPE-PTCDI film. Furthermore, the device with PI(APSP-6FDA) exhibited the largest memory window of 63 V because the highest HOMO energy level and largest electric filed facilitated the charges transferring from BPE-PTCDI and trapping in the PI electret. Moreover, the charge transfer from BPE-PTCDI to the PI(APSP-6FDA) or PI(APST-6FDA) electrets was more efficient than that of PI(ODA-6FDA) due to the electron-donating heterocyclic ring. The nanowire device with PI(APSP-6FDA) showed a relatively larger memory window of 82 V, compared to the thin film device. The present study suggested that the donor−acceptor polyimide electrets could enhance the capabilities for transferring and store the charges and have potential applications for advanced OFET memory devices.
URI
http://pubs.kist.re.kr/handle/201004/43259
ISSN
00249297
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