Ge2Sb2Te5 as a ferroelectric: A single-element low-voltage dynamic memory

Title
Ge2Sb2Te5 as a ferroelectric: A single-element low-voltage dynamic memory
Authors
Sang Hyeon LeeMoonkyung Kim정병기Jo-Won LeeSandip Tiwari
Keywords
depolarization field; DRAM; ferroelectric; Ge2Sb2Te5; memory; polarization; single element
Issue Date
2012-09
Publisher
IEEE Electron Device Letters
Citation
VOL 33, NO 9, 1231-1233
Abstract
Ge2Sb2Te5 (GST) is normally employed as a current-driven and heat-triggered structural phase-change material in multielement phase-change memories. This work identifies GST as a ferroelectric material suitable for a single-element memory operating at low voltages without heat-based transformation. With GST as a floating gate, hysteretic behavior that is opposite of that arising fromcharge trapping and consistent with ferroelectric phase transition is characterized. Saturating memory window of ~1 V under ±4 V cycling and retention times of hundreds of seconds constrained by depolarization are observed. Extracted remnant polarization is ~0.13 μC/㎠. The result suggests potential for embedded use with the advantages of a retention time that is competitive or better than DRAMs, a single-element transistorlike structure and technologically easy integration.
URI
http://pubs.kist.re.kr/handle/201004/43379
ISSN
07413106
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KIST Publication > Article
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