Ge2Sb2Te5 as a ferroelectric: A single-element low-voltage dynamic memory
- Ge2Sb2Te5 as a ferroelectric: A single-element low-voltage dynamic memory
- Sang Hyeon Lee; Moonkyung Kim; 정병기; Jo-Won Lee; Sandip Tiwari
- depolarization field; DRAM; ferroelectric; Ge2Sb2Te5; memory; polarization; single element
- Issue Date
- IEEE Electron Device Letters
- VOL 33, NO 9, 1231-1233
- Ge2Sb2Te5 (GST) is normally employed as a
current-driven and heat-triggered structural phase-change material
in multielement phase-change memories. This work identifies
GST as a ferroelectric material suitable for a single-element memory
operating at low voltages without heat-based transformation.
With GST as a floating gate, hysteretic behavior that is opposite of
that arising fromcharge trapping and consistent with ferroelectric
phase transition is characterized. Saturating memory window of
~1 V under ±4 V cycling and retention times of hundreds of seconds
constrained by depolarization are observed. Extracted remnant
polarization is ~0.13 μC/㎠. The result suggests potential
for embedded use with the advantages of a retention time that is
competitive or better than DRAMs, a single-element transistorlike
structure and technologically easy integration.
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