Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films

Title
Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films
Authors
D.W. LeeM.S. SeolD.W. KwakJ.S. Oh정증현H.Y. Cho
Keywords
Copper Indium gallium sulfide; Deep level transient spectroscopy; Evaporation; Proton implantation; Solar cells
Issue Date
2012-08
Publisher
Thin solid films
Citation
VOL 520, NO 20, 6382-6385
Abstract
Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se2 (CIGS) based thin films for solar cell were investigated. CIGS films with a thickness of 3 μm were grown on a soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and 3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep level defects in CIGS films can be controlled by hydrogen effects.
URI
http://pubs.kist.re.kr/handle/201004/43387
ISSN
00406090
Appears in Collections:
KIST Publication > Article
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