Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films
- Hydrogen effects on deep level defects in proton implanted Cu(In,Ga)Se2 based thin films
- D.W. Lee; M.S. Seol; D.W. Kwak; J.S. Oh; 정증현; H.Y. Cho
- Copper Indium gallium sulfide; Deep level transient spectroscopy; Evaporation; Proton implantation; Solar cells
- Issue Date
- Thin solid films
- VOL 520, NO 20, 6382-6385
- Hydrogen effects on deep level defects and a defect generation in proton implanted Cu(In,Ga)Se2 (CIGS)
based thin films for solar cell were investigated. CIGS films with a thickness of 3 μm were grown on a
soda-lime glass substrate by a co-evaporation method, and then were implanted with protons. To study
deep level defects in the proton implanted CIGS films, deep level transient spectroscopy measurements on
the CIGS-based solar cells were carried out, these measurements found 6 traps (including 3 hole traps and
3 electron traps). In the proton implanted CIGS films, the deep level defects, which are attributed to the recombination
centers of the CIGS solar cell, were significantly reduced in intensity, while a deep level defect
was generated around 0.28 eV above the valence band maximum. Therefore, we suggest that most deep
level defects in CIGS films can be controlled by hydrogen effects.
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