High rectification and photovoltaic effect in oxide nano-junctions
- High rectification and photovoltaic effect in oxide nano-junctions
- T. Choi; L. Jiang; 이수연; T. Egami; H. N. Lee
- Issue Date
- New journal of physics
- VOL 14, NO 9, 093056-1-093056-10
- Polar oxide-based heterostructures composed of ferroelectric
PbZr0.2Ti0.8O3 and hole-doped La0.8Sr0.2MnO3 ultrathin epitaxial films were
fabricated on Nb : SrTiO3 substrates to check the viability of all oxide-based
photovoltaic (PV) nano-junctions. We observed clear diode-like behavior,
yielding a rectification ratio up to ~1000. This large enhancement could be
attributed to the presence of an ultrathin ferroelectric layer (<10 nm) that greatly
contributed to the improved PV performance by promoting carrier separation, as
compared with oxide junctions without the ferroelectric layer. Therefore, our
results provide useful information for developing highly efficient ferroelectric
oxide-based PV devices.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.