Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy

Title
Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy
Authors
최원준송진동황성호이정일김정훈송종인김은규A. Chovet
Keywords
InGaAs; GaAs; Quantum dots; QDIP; Low-frequency noise; Hooge parameter
Issue Date
2005-02
Publisher
Physica E, Low-dimensional systems & nanostructures
Citation
VOL 26, 366-371
URI
http://pubs.kist.re.kr/handle/201004/43546
ISSN
1386-9477
Appears in Collections:
KIST Publication > Article
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