Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process

Title
Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process
Authors
심선일권영석김성일김용태박정호
Issue Date
2005-03
Publisher
Solid-state electronics
Citation
VOL 49, NO 3, 497-504
URI
http://pubs.kist.re.kr/handle/201004/43552
ISSN
0038-1101
Appears in Collections:
KIST Publication > Article
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