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dc.contributor.author성한규-
dc.contributor.authorSeoung Yong Lee-
dc.contributor.author최헌진-
dc.contributor.authorT. H. Kim-
dc.contributor.authorN. K. Cho-
dc.contributor.authorK. S. Nahm-
dc.contributor.authorS. K. Lee-
dc.date.accessioned2015-12-03T00:52:47Z-
dc.date.available2015-12-03T00:52:47Z-
dc.date.issued200610-
dc.identifier.citationVOL 527-529, 771-774-
dc.identifier.issn0255-5476-
dc.identifier.other24199-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/43614-
dc.publisherMaterials science forum-
dc.subjectSiC-
dc.subjectnanowires-
dc.subjectCVD-
dc.subjectFET-
dc.titleFabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor-
dc.typeArticle-
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