Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene

Title
Parametric Study of Methanol Chemical Vapor Deposition Growth for Graphene
Authors
조현진이창협오인섭박성찬김환철김명종
Keywords
graphene; synthesis; methanol; LPCVD; large area; low pressure chemical vapor deposition
Issue Date
2012-10
Publisher
Carbon Letters
Citation
VOL 13, NO 4, 205-211
Abstract
Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.
URI
http://pubs.kist.re.kr/handle/201004/43727
ISSN
19764251
Appears in Collections:
KIST Publication > Article
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